Title of article
Shot noise measurements in graphene
Author/Authors
R. Danneau، نويسنده , , R. and Wu، نويسنده , , F. and Craciun، نويسنده , , M.F. and Russo، نويسنده , , S. and Tomi، نويسنده , , M.Y. and Salmilehto، نويسنده , , J. and Morpurgo، نويسنده , , A.F. and Hakonen، نويسنده , , P.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
6
From page
1050
To page
1055
Abstract
We have investigated shot noise at microwave frequencies in wide-aspect-ratio graphene sheets in the temperature range of 4.2–30 K. We find that for our short ( L < 300 nm ) graphene samples with width over length ratio W / L > 3 , the Fano factor F reaches a maximum F ∼ 1 / 3 at the Dirac point and that it decreases substantially with increasing charge density. Our results agree with the theoretical prediction that electrical transport at the Dirac point is governed by evanescent electronic states.
Keywords
A. Nanostructures , D. Noise , D. Electronic transport
Journal title
Solid State Communications
Serial Year
2009
Journal title
Solid State Communications
Record number
1765312
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