• Title of article

    Diffusion thermopower of the two-dimensional electron gas in GaN single quantum wells

  • Author/Authors

    Ghosal، نويسنده , , A. and Chattopadhyay، نويسنده , , D.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    2
  • From page
    1264
  • To page
    1265
  • Abstract
    Diffusion thermopower ( S d ) of the two-dimensional (2D) electron gas in GaN single quantum wells is calculated in the temperature range 1 K–12 K using the Fermi–Dirac distribution function. Scattering of carriers through acoustic phonons via deformation potential and piezoelectric couplings, and through background and remote ionized impurities is included. S d is found to decrease with temperature and the 2D electron concentration, and is primarily controlled by deformation potential acoustic scattering. The dependence of S d on the well width and the ionized impurity concentration is found to be quite weak.
  • Keywords
    A. Quantum wells , D. Electronic transport , A. Semiconductors
  • Journal title
    Solid State Communications
  • Serial Year
    2009
  • Journal title
    Solid State Communications
  • Record number

    1765430