Title of article :
Diffusion thermopower of the two-dimensional electron gas in GaN single quantum wells
Author/Authors :
Ghosal، نويسنده , , A. and Chattopadhyay، نويسنده , , D.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
2
From page :
1264
To page :
1265
Abstract :
Diffusion thermopower ( S d ) of the two-dimensional (2D) electron gas in GaN single quantum wells is calculated in the temperature range 1 K–12 K using the Fermi–Dirac distribution function. Scattering of carriers through acoustic phonons via deformation potential and piezoelectric couplings, and through background and remote ionized impurities is included. S d is found to decrease with temperature and the 2D electron concentration, and is primarily controlled by deformation potential acoustic scattering. The dependence of S d on the well width and the ionized impurity concentration is found to be quite weak.
Keywords :
A. Quantum wells , D. Electronic transport , A. Semiconductors
Journal title :
Solid State Communications
Serial Year :
2009
Journal title :
Solid State Communications
Record number :
1765430
Link To Document :
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