Author/Authors :
Sun، نويسنده , , L.J. and Hu، نويسنده , , J. and He، نويسنده , , H.Y and Wu، نويسنده , , X.P. and Xu، نويسنده , , X.Q. and Lin، نويسنده , , B.X. and Fu، نويسنده , , Z.X. and Pan، نويسنده , , B.C.، نويسنده ,
Abstract :
Ag–S codoped ZnO thin films have been fabricated on Si substrates by radio frequency (RF) magnetron sputtering using a thermal oxidation method. XRD and SEM measurements showed that the sample has hexagonal wurtzite structure with a preferential (002) orientation and the surface is composed of compact and uniform grains. AgZn–nSO defect complexes were observed in the Ag–S codoped ZnO films by XPS analysis. Low temperature PL spectra showed neutral acceptor bound exciton emission related to AgZn–nSO. The corresponding acceptor ionization energy of 150 meV is much lower than that of monodoped Ag (246 meV), which is favorable for p-type doping of ZnO.
Keywords :
E. Luminescence , A. Semiconductors , C. Point defects , D. Optical properties
