Author/Authors :
Zhou، نويسنده , , Bi and Pan، نويسنده , , S.W. and Chen، نويسنده , , Rui and Chen، نويسنده , , S.Y. and Li، نويسنده , , Cheng and Lai، نويسنده , , H.K. and Yu، نويسنده , , J.Z. and Zhu، نويسنده , , X.F.، نويسنده ,
Abstract :
SiGe/Si heterogeneous nanostructures are prepared by electrochemical anodization of SiGe/Si multiple layers grown by ultra-high vacuum chemical vapor deposition. Nanorods with densities up to ∼2×1011 cm−2 have been observed with a relatively uniform distribution confirmed by scanning electron microscope images of both top and cross-sectional views. The samples show visible photoluminescence with multiple peaks and narrow widths which is related to the interference effect. Finally, a model is proposed to explain the role of strain during the anodization of SiGe/Si multiple layers.
Keywords :
A. Strain-induced , D. Heterogeneous nanostructures , B. Electrochemical anodization , C. Silicon germanium
