Author/Authors :
Wang، نويسنده , , L.K. and Ju، نويسنده , , Z.G. and Shan، نويسنده , , C.X. and Zheng، نويسنده , , J. and Shen، نويسنده , , D.Z. and Yao، نويسنده , , B. and Zhao، نويسنده , , D.X. and Zhang، نويسنده , , Z.Z. and Li، نويسنده , , B.H. and Zhang، نويسنده , , J.Y.، نويسنده ,
Abstract :
A Mg0.48Zn0.52O thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition, and the thin film exhibits a single cubic phase with high crystal quality from X-ray diffraction measurements. A metal–semiconductor–metal (MSM) structured photodetector was fabricated on the film. The device exhibits a peak response of 268 nm with a cutoff wavelength at 283 nm. Rise and decay times of 10 ns and 150 ns, respectively, are obtained with a load resistance of 50 Ω . The pulse response for the device is limited by the RC time constant.
Keywords :
A. Semiconductors , B. MOCVD , C. Metal–semiconductor–metal , C. Fast response
