Title of article :
NOR gate response in a double quantum ring: An exact result
Author/Authors :
Maiti، نويسنده , , Santanu K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
5
From page :
2146
To page :
2150
Abstract :
NOR gate response in a double quantum ring, where each ring is threaded by a magnetic flux ϕ , is investigated. The double quantum ring is sandwiched symmetrically between two semi-infinite one-dimensional metallic electrodes, and two gate voltages, namely, V a and V b , are applied, respectively, in lower arms of the two rings those are treated as the two inputs of the NOR gate. A simple tight-binding model is used to describe the system, and all the calculations are done through the Green’s function formalism. Here we calculate exactly the conductance–energy and current–voltage characteristics as functions of the ring-to-electrode coupling strengths, magnetic flux and gate voltages. Our numerical study predicts that, for a typical value of the magnetic flux ϕ = ϕ 0 / 2 ( ϕ 0 = c h / e , the elementary flux-quantum), a high output current (1) (in the logical sense) appears if both the inputs to the gate are low (0), while if one or both are high (1), a low output current (0) results. It clearly demonstrates the NOR gate behavior, and this aspect may be utilized in designing an electronic logic gate.
Keywords :
D. NOR gate , A. Double quantum ring , D. I–V characteristic , D. Conductance
Journal title :
Solid State Communications
Serial Year :
2009
Journal title :
Solid State Communications
Record number :
1766180
Link To Document :
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