Title of article :
On the low-temperature properties of
Author/Authors :
Gondek، نويسنده , , ?ukasz and Kaczorowski، نويسنده , , Dariusz and Szytu?a، نويسنده , , Andrzej، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
Magnetic, electrical transport and heat capacity measurements have been performed on polycrystalline sample of the compound TmRu2Si2, which crystallizes with the tetragonal ThCr2Si2-type crystal structure. The results show paramagnetic behaviour down to 0.3 K, at variance with the literature data. On the basis of the collected data, possible origins of non-magnetic behaviour are discussed. Mixed valence of Tm ions or hybridisation between Tm 4f and Ru 4d states are the most probable reasons for paramagnetic behaviour of the TmRu2Si2.
Keywords :
D. Electronic transport , D. Heat capacity , D. Thermodynamic properties , A. Metals
Journal title :
Solid State Communications
Journal title :
Solid State Communications