• Title of article

    Electric field and temperature dependence of hole mobility in electroluminescent PDY 132 polymer thin films

  • Author/Authors

    Bajpai، نويسنده , , Manisha and Kumari، نويسنده , , Kusum and Srivastava، نويسنده , , Ritu and Kamalasanan، نويسنده , , M.N. and Tiwari، نويسنده , , R.S. and Chand، نويسنده , , Suresh، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    581
  • To page
    584
  • Abstract
    The current density–voltage ( J – V ) behavior of polymer PDY 132 thin films has been investigated in hole-only device configuration, viz., ITO/poly(ethylene-dioxthiophene):polystyrenesulphonate (PEDOT:PSS)/PDY 132/Au, as a function of polymer (PDY) film thickness (150 nm and 200 nm) and temperature (290–90 K). Hole current density was found to follow two distinct modes of conduction, (i) low electric field region I: ohmic conduction where slope ∼ 1 , and (ii) intermediate and high electric field region II: non ohmic conduction where slope ∼ 2 . Region I has been attributed to the transport of intrinsic background charge carriers while region II has been found to be governed by space charge limited currents (SCLC) with hole mobility strongly dependent on electric field and temperature. The respective hole transport parameters determined from the SCLC regime, μ p 0 is 3.7 × 1 0 − 3 m 2 / V s , μ p ( 0 , T ) is 3.7 × 1 0 − 8 m 2 / V s , and zero field activation energy ( Δ 0 ) of 0.48 eV is obtained.
  • Keywords
    D. Hole mobility , A. Polymer , B. SCLC method , D. Charge transport
  • Journal title
    Solid State Communications
  • Serial Year
    2010
  • Journal title
    Solid State Communications
  • Record number

    1766573