Title of article :
Electric field and temperature dependence of hole mobility in electroluminescent PDY 132 polymer thin films
Author/Authors :
Bajpai، نويسنده , , Manisha and Kumari، نويسنده , , Kusum and Srivastava، نويسنده , , Ritu and Kamalasanan، نويسنده , , M.N. and Tiwari، نويسنده , , R.S. and Chand، نويسنده , , Suresh، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
4
From page :
581
To page :
584
Abstract :
The current density–voltage ( J – V ) behavior of polymer PDY 132 thin films has been investigated in hole-only device configuration, viz., ITO/poly(ethylene-dioxthiophene):polystyrenesulphonate (PEDOT:PSS)/PDY 132/Au, as a function of polymer (PDY) film thickness (150 nm and 200 nm) and temperature (290–90 K). Hole current density was found to follow two distinct modes of conduction, (i) low electric field region I: ohmic conduction where slope ∼ 1 , and (ii) intermediate and high electric field region II: non ohmic conduction where slope ∼ 2 . Region I has been attributed to the transport of intrinsic background charge carriers while region II has been found to be governed by space charge limited currents (SCLC) with hole mobility strongly dependent on electric field and temperature. The respective hole transport parameters determined from the SCLC regime, μ p 0 is 3.7 × 1 0 − 3 m 2 / V s , μ p ( 0 , T ) is 3.7 × 1 0 − 8 m 2 / V s , and zero field activation energy ( Δ 0 ) of 0.48 eV is obtained.
Keywords :
D. Hole mobility , A. Polymer , B. SCLC method , D. Charge transport
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1766573
Link To Document :
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