Title of article :
Electronic structure and magnetic properties in Nitrogen-doped from density functional calculations
Author/Authors :
Xiao، نويسنده , , Wenzhi and Wang، نويسنده , , Ling-Ling and Xu، نويسنده , , Liang and Wan، نويسنده , , Qing and Pan، نويسنده , , An-Lian، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
Based on first-principles spin-polarized density functional theory calculations, the electronic and magnetic properties of nitrogen-doped monoclinic β -phase gallium oxide are investigated. Calculations predict that the spin-polarized state is stable with a magnetic moment of about 1.0 μB per nitrogen-dopant. The magnetic moment mainly arises from the p orbital of nitrogen, with a little contribution from the Oxygen atoms surrounding it. Magnetic coupling between different nitrogen atoms is discussed, and the results show that the hole-mediated short-range p–p exchange mechanism is responsible for the predicted ferromagnetism. Calculations also reveal that experimentally observed red-shift should be N-2p gap states to band transition.
Keywords :
A. Dilute magnetic semiconductor , D. Electronic structure , B. Nitrogen-doped Ga2O3 , D. Magnetic properties
Journal title :
Solid State Communications
Journal title :
Solid State Communications