• Title of article

    Electronic structure and magnetic properties in Nitrogen-doped from density functional calculations

  • Author/Authors

    Xiao، نويسنده , , Wenzhi and Wang، نويسنده , , Ling-Ling and Xu، نويسنده , , Liang and Wan، نويسنده , , Qing and Pan، نويسنده , , An-Lian، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    5
  • From page
    852
  • To page
    856
  • Abstract
    Based on first-principles spin-polarized density functional theory calculations, the electronic and magnetic properties of nitrogen-doped monoclinic β -phase gallium oxide are investigated. Calculations predict that the spin-polarized state is stable with a magnetic moment of about 1.0 μB per nitrogen-dopant. The magnetic moment mainly arises from the p orbital of nitrogen, with a little contribution from the Oxygen atoms surrounding it. Magnetic coupling between different nitrogen atoms is discussed, and the results show that the hole-mediated short-range p–p exchange mechanism is responsible for the predicted ferromagnetism. Calculations also reveal that experimentally observed red-shift should be N-2p gap states to band transition.
  • Keywords
    A. Dilute magnetic semiconductor , D. Electronic structure , B. Nitrogen-doped Ga2O3 , D. Magnetic properties
  • Journal title
    Solid State Communications
  • Serial Year
    2010
  • Journal title
    Solid State Communications
  • Record number

    1766725