Title of article
Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well
Author/Authors
Lo، نويسنده , , Shun-Tsung and Chen، نويسنده , , Kuang Yao and Su، نويسنده , , Yi-Chun and Liang، نويسنده , , C.-T. and Chang، نويسنده , , David Y.H. and Kim، نويسنده , , Gil-Ho and Wu، نويسنده , , J.-Y. and Lin، نويسنده , , Sheng-Di، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
1104
To page
1107
Abstract
We have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well. With increasing temperature T , a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed. Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T .
Keywords
A. Quantum wells , D. Quantum localization , A. Semiconductors
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1766838
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