Author/Authors :
Patel، نويسنده , , Shiv P. and Chawla، نويسنده , , A.K. and Chandra، نويسنده , , Ramesh and Prakash، نويسنده , , Jai and Kulriya، نويسنده , , P.K. and Pivin، نويسنده , , J.C. and Kanjilal، نويسنده , , D. and Kumar، نويسنده , , Lokendra، نويسنده ,
Abstract :
Zinc sulfide (ZnS) thin films in zinc-blende (ZB) and wurtzite (W) phases have been fabricated by pulsed laser deposition. 150 MeV Ni ion beam irradiation has been carried out at different fluences ranging from 1011 to 1013 ions/cm2 at room temperature for ion induced modifications. Structural phase transformation in ZnS from W to ZB phase is observed after high energy ion irradiation which leads to the decrease in bandgap. Generation of high pressure and temperature by thermal spike during MeV ion irradiation along the ion trajectory in the films is responsible for the structural phase transformation.
Keywords :
A. Thin films , A. Semiconductors , D. Phase transitions , D. Electron–phonon interactions
