• Title of article

    Polarization switching in near-stoichiometric Zn:LiNbO3 at high temperatures

  • Author/Authors

    Reddy، نويسنده , , J.N. Babu and Bhat، نويسنده , , H.L. and Elizabeth، نويسنده , , Suja، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    1258
  • To page
    1261
  • Abstract
    The effect of temperature and stoichiometry on the polarization switching rate in lithium niobate is presented. An increased polarization switching rate in congruent and near-stoichiometric lithium niobate (CLN and SLN) and SLN doped with 1.6 mol% Zn (SLN:Zn(1.6)) is observed using a pulsed field switching technique near the transition temperature ( T C ) . Compared to CLN, the observed switching rate and domain wall mobility for SLN and SLN:Zn(1.6) are higher. The extra charge flow was observed during switching at high temperatures, and is attributed to the creation of defect dipoles and increase in ionic conductivity. Forward domain motion is expected to be the mechanism involved in switching.
  • Keywords
    A. Stoichiometric lithium niobate , A. Ferroelectric crystals , D. Polarization switching
  • Journal title
    Solid State Communications
  • Serial Year
    2010
  • Journal title
    Solid State Communications
  • Record number

    1766925