Author/Authors :
Ye، نويسنده , , H. and Lu، نويسنده , , P.F. and Yu، نويسنده , , Z.Y and Wang، نويسنده , , D.L and Chen، نويسنده , , Z.H. and Liu، نويسنده , , Y.M. and Wang، نويسنده , , S.M.، نويسنده ,
Abstract :
We present a novel computational method by combining the finite element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appear around the dislocation core. We find that the dominant driving force of non-uniform composition is strain contribution. Moreover, the method can be applied to the dislocated nanoscale heterostructures which are inaccessible by atomic treatment.
