Title of article
Dislocation-induced composition profile in alloy semiconductors
Author/Authors
Ye، نويسنده , , H. and Lu، نويسنده , , P.F. and Yu، نويسنده , , Z.Y and Wang، نويسنده , , D.L and Chen، نويسنده , , Z.H. and Liu، نويسنده , , Y.M. and Wang، نويسنده , , S.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
1275
To page
1278
Abstract
We present a novel computational method by combining the finite element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appear around the dislocation core. We find that the dominant driving force of non-uniform composition is strain contribution. Moreover, the method can be applied to the dislocated nanoscale heterostructures which are inaccessible by atomic treatment.
Keywords
A. Nanostructures , D. Mechanical properties , A. Semiconductors
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1766935
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