Title of article
Annealing effect on photoluminescence of Tb-doped AlBON films
Author/Authors
Masumoto، نويسنده , , Keiko and Kimura، نويسنده , , Chiharu and Aoki، نويسنده , , Hidemitsu and Sugino، نويسنده , , Takashi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
1396
To page
1399
Abstract
Photoluminescence (PL) of Tb-doped AlBON (AlBON:Tb) films is investigated. The AlBON:Tb films are synthesized by RF magnetron sputtering. The PL intensity of the film with 800 °C annealing is about 10 times larger than that of the film without annealing. X-ray photoelectron spectroscopy (XPS) measurement suggests that Tb 4 + ions decrease compared with Tb3+ ions after annealing treatment. Oxygen atoms in the AlBON:Tb film are dissociated from Tb and bonded to boron atoms by annealing treatment. It is possible that decrease in Tb4+ ions leads to increase in the PL intensity by annealing treatment.
Keywords
A. Semiconductors , E. X-ray photoelectron spectroscopy , E. Luminescence , A. Rare earth
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1766990
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