Title of article
Landau levels and magnetopolaron effect in dilute GaAs:N
Author/Authors
Krstaji?، نويسنده , , P.M. and Peeters، نويسنده , , F.M. and Helm، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
5
From page
1575
To page
1579
Abstract
The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological band anticrossing model (BAC) which we extended in order to include the magnetic field and electron–phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy ħ ω c .
Keywords
C. Impurities in semiconductors , A. Semiconductors , D. Cyclotron resonance
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1767090
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