• Title of article

    Landau levels and magnetopolaron effect in dilute GaAs:N

  • Author/Authors

    Krstaji?، نويسنده , , P.M. and Peeters، نويسنده , , F.M. and Helm، نويسنده , , M.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    5
  • From page
    1575
  • To page
    1579
  • Abstract
    The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological band anticrossing model (BAC) which we extended in order to include the magnetic field and electron–phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy ħ ω c .
  • Keywords
    C. Impurities in semiconductors , A. Semiconductors , D. Cyclotron resonance
  • Journal title
    Solid State Communications
  • Serial Year
    2010
  • Journal title
    Solid State Communications
  • Record number

    1767090