• Title of article

    Theoretical interpretation of the zero-field splitting parameters for ions in wide-band gap semiconductor single crystal

  • Author/Authors

    Aç?kg?z، نويسنده , , Muhammed and Gnutek، نويسنده , , Pawe? and Rudowicz، نويسنده , , Czes?aw، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    1610
  • To page
    1613
  • Abstract
    Superposition model (SPM) calculations are carried out to provide theoretical interpretation of the zero-field splitting (ZFS) parameters and investigate the local environment around the Fe3+ centers in a TlGaSe2 single crystal. Experimental electron magnetic resonance (EMR) data are analyzed and compared with the ZFS parameter values predicted by SPM based on the orthorhombic approximation of structural data. The results provide an adequate interpretation of the ZFS parameters obtained by fitting EMR spectra and indicate that Fe3+ ions substitute for the Ga3+ ions in TlGaSe2 crystal.
  • Keywords
    A. Semiconductors , C. Point defects , E. Electron paramagnetic resonance , D. Crystal and ligand fields
  • Journal title
    Solid State Communications
  • Serial Year
    2010
  • Journal title
    Solid State Communications
  • Record number

    1767112