Title of article
Theoretical interpretation of the zero-field splitting parameters for ions in wide-band gap semiconductor single crystal
Author/Authors
Aç?kg?z، نويسنده , , Muhammed and Gnutek، نويسنده , , Pawe? and Rudowicz، نويسنده , , Czes?aw، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
1610
To page
1613
Abstract
Superposition model (SPM) calculations are carried out to provide theoretical interpretation of the zero-field splitting (ZFS) parameters and investigate the local environment around the Fe3+ centers in a TlGaSe2 single crystal. Experimental electron magnetic resonance (EMR) data are analyzed and compared with the ZFS parameter values predicted by SPM based on the orthorhombic approximation of structural data. The results provide an adequate interpretation of the ZFS parameters obtained by fitting EMR spectra and indicate that Fe3+ ions substitute for the Ga3+ ions in TlGaSe2 crystal.
Keywords
A. Semiconductors , C. Point defects , E. Electron paramagnetic resonance , D. Crystal and ligand fields
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1767112
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