Title of article
The structural and electrical properties of oriented films prepared by metal organic deposition method
Author/Authors
Wang، نويسنده , , Xiaofei and Lu، نويسنده , , Xiaomei and Bo، نويسنده , , Huifeng and Liu، نويسنده , , Yaoyang and Shen، نويسنده , , Yanchi and Wu، نويسنده , , Xiaobo and Cai، نويسنده , , Meng-Wei and Kan، نويسنده , , Yi and Zhang، نويسنده , , Chao and Liu، نويسنده , , Yunfei and Huang، نويسنده , , Fengzhen and Zhu، نويسنده , , Jinsong، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
1637
To page
1640
Abstract
Strontium titanate films with high a -axis orientation [ a ( 100 ) = 94.1 % ] and random orientation were deposited on (111) Pt/Ti/ SiO2/Si substrates by a concentration controlling of the precursor solution during the metal organic deposition process. Topography of samples was investigated by atomic force microscopy after annealing at 800 °C. X-ray diffraction found that the degree of a -axis orientation increased with increasing annealing temperature. The leakage current and the dielectric property were strongly dependent on the film orientation, and the possible causes of orientation dependence were discussed.
Keywords
D. Electrical property , A. Oriented SrTiO3 film , B. Metal organic deposition
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1767128
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