Title of article :
Defect absorption and optical transitions in hydrogenated amorphous silicon
Author/Authors :
Thevaril، نويسنده , , Jasmin J. and O’Leary، نويسنده , , Stephen K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
5
From page :
1851
To page :
1855
Abstract :
Using an empirical model for the density of states functions associated with hydrogenated amorphous silicon, with defect states taken into account, we examine how the distributions of such states shape the optical response of this material. The contributions to this response attributable to the various types of optical transitions are also determined. Finally, we demonstrate that we are able to capture the spectral dependence of the optical absorption coefficient associated with a defect absorption influenced sample of hydrogenated amorphous silicon using our empirical formalism for the density of states functions associated with this material.
Keywords :
A. Semiconductors , C. Optical response , A. Hydrogenated amorphous silicon , D. Defect states
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1768086
Link To Document :
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