Author/Authors :
Lo، نويسنده , , Shun-Tsung and Chen، نويسنده , , Kuang Yao and Lin، نويسنده , , T.L. and Lin، نويسنده , , Li-Hung and Luo، نويسنده , , Dong-Sheng and Ochiai، نويسنده , , Y. and Aoki، نويسنده , , N. and Wang، نويسنده , , Yi-Ting and Peng، نويسنده , , Zai Fong and Lin، نويسنده , , Yiping and Chen، نويسنده , , J.C. and Lin، نويسنده , , Sheng-Di and Huang، نويسنده , , C.F. and Liang، نويسنده , , C.-T.، نويسنده ,
Abstract :
We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator–quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron–electron interaction effects for the observed transition in our study.
Keywords :
D. Electron–electron interactions , D. Quantum hall effect , B. Epitaxy , A. Semiconductor
