Title of article :
Quantum Hall activation gaps in bilayer graphene
Author/Authors :
Kurganova، نويسنده , , E.V. and Giesbers، نويسنده , , A.J.M. and Gorbachev، نويسنده , , R.V. and Geim، نويسنده , , A.K. and Novoselov، نويسنده , , K.S. and Maan، نويسنده , , J.C. and Zeitler، نويسنده , , U.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
3
From page :
2209
To page :
2211
Abstract :
We have measured the quantum Hall activation gaps in bilayer graphene at filling factors ν = ± 4 and ν = ± 8 in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field.
Keywords :
A. Bilayer graphene , D. Landau levels , D. Quantum hall effect
Journal title :
Solid State Communications
Serial Year :
2010
Journal title :
Solid State Communications
Record number :
1768309
Link To Document :
بازگشت