Title of article :
Three-dimensional write–read–erase memory bits by femtosecond laser pulses in photorefractive LiNbO3 crystals
Author/Authors :
Gamaly، نويسنده , , Eugene G. and Juodkazis، نويسنده , , Saulius and Mizeikis، نويسنده , , Vygantas and Misawa، نويسنده , , Hiroaki and Rode، نويسنده , , Andrei V. and Krolikowski، نويسنده , , Wieslaw Z. and Kitamura، نويسنده , , Kenji، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2008
Pages :
4
From page :
416
To page :
419
Abstract :
We report on a three-dimensional single-shot optical recording by 150 fs pulses at 800 nm wavelength in Fe-doped and stoichiometric undoped LiNbO3. The highest refractive index modulation of ∼10−3 per single pulse has been achieved at close to the dielectric breakdown irradiance of ∼TW/cm2, and was found to be independent of polarization of the writing beam. The quasi-permanent and rewritable bits have been demonstrated in Fe-doped LiNbO3. Recording in undoped stoichiometric LiNbO3 was of transient nature with full optical contrast recovery on a 0.1–1 s scale. The observed refractive index modulation is explainable by the photovoltaic effect in LiNbO3.
Keywords :
78.20Bh , 78.47+p , Lithium niobate , Three-dimensional optical memory , Femtosecond laser microfabrication , 42.50Gy , 77.84Dy , Photovoltaic effect
Journal title :
Current Applied Physics
Serial Year :
2008
Journal title :
Current Applied Physics
Record number :
1768706
Link To Document :
بازگشت