A gas cluster ion beam accelerator

An assembled CO2 gas cluster ion beam system was assessed using a retarding field analyzer and a time-of-flight mass spectrometer. The CO2 gas was expanded to form gas clusters at the input pressure of 1–5 bar through a quartz Laval nozzle. At 4 bar, it is confirmed that the clusters consisted of about 500 molecules. Also the dependence of the mean cluster size distribution on source temperature was examined. At the low fluence of ion beam, an isolated gas cluster ion impact on solid surfaces was investigated. CO2 gas cluster ions were irradiated at the acceleration voltage of 40–60 kV on highly oriented pyrolytic graphite. Si with native oxide layers, and Cu film deposited on Si wafer. After very short exposure of cluster ions, induced hillocks with about 0.8–1 nm in height and 20 nm in width were outgrown from the impacted surfaces. After prolonged irradiation on Si and Cu/Si, humping was more developed and consequently the surface morphology seemed to be saturated because of gradual filling the gap between the hillocks.