Title of article :
Low-temperature saturation of dephasing in heavily doped conjugated polymers
Author/Authors :
Aleshin، نويسنده , , A.N. and Kozub، نويسنده , , V.I. and Suh، نويسنده , , D.-S. and Park، نويسنده , , Y.W.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2002
Abstract :
Based on our low temperature (down to 0.5 K) electronic transport studies of heavily doped polyacetylene and magnetotransport results reported for other heavily doped conjugated polymers, we demonstrate that the low-temperature saturation of electron dephasing found for metallic and semiconducting materials is also exhibited in conducting polymers. Such behavior explained by a model, which involves electron dephasing by two-level systems of a special type originating from initially symmetric defect configurations where the symmetry is partially lifted by disorder.
Keywords :
conducting polymers , Conductivity , magnetoresistance
Journal title :
Current Applied Physics
Journal title :
Current Applied Physics