Title of article
Low-temperature saturation of dephasing in heavily doped conjugated polymers
Author/Authors
Aleshin، نويسنده , , A.N. and Kozub، نويسنده , , V.I. and Suh، نويسنده , , D.-S. and Park، نويسنده , , Y.W.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2002
Pages
6
From page
91
To page
96
Abstract
Based on our low temperature (down to 0.5 K) electronic transport studies of heavily doped polyacetylene and magnetotransport results reported for other heavily doped conjugated polymers, we demonstrate that the low-temperature saturation of electron dephasing found for metallic and semiconducting materials is also exhibited in conducting polymers. Such behavior explained by a model, which involves electron dephasing by two-level systems of a special type originating from initially symmetric defect configurations where the symmetry is partially lifted by disorder.
Keywords
conducting polymers , Conductivity , magnetoresistance
Journal title
Current Applied Physics
Serial Year
2002
Journal title
Current Applied Physics
Record number
1768990
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