Ultrafast electron drift velocity overshoot in 3C–SiC

A theoretical study on the ultrafast high-field transport transient properties of electrons in 3C–SiC is performed within a parabolic and a nonparabolic band scheme. In both cases, the transient regime before the electron energy and drift velocity attain their steady-state is shown to be shorter than 0.2 ps. When the applied electric field intensity is higher than 300 kV/cm, an overshoot always occurs in the electron drift velocity, which is more pronounced when band nonparabolicity is considered.