Title of article :
Fluctuation-stimulated variable-range hopping
Author/Authors :
Kozub، نويسنده , , V.I and Baranovskii، نويسنده , , S.D and Shlimak، نويسنده , , I، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
A qualitatively new transport mechanism is suggested for hopping of carriers according to which the variable-range hopping (VRH) arises from the resonant tunneling between transport states brought into resonance by Coulomb potentials produced by surrounding sites with fluctuating occupations. A semiquantitative description of the hopping transport is given based on the assumption that fluctuations of energies of hopping sites have spectral density 1/f.
Keywords :
A. Semiconductors , D. Electronic transport , D. Electronic states (localized) , D. Noise
Journal title :
Solid State Communications
Journal title :
Solid State Communications