Interband resonant tunnelling in quantizing magnetic field

We present an investigation of the interband resonant tunnelling in semiconductor heterostructures in a quantizing magnetic field normal to interfaces taking into account the mixing of electron, light and heavy hole states. The probabilities of the tunnelling transitions between the states of different Landau levels are obtained for a InAs/AlSb/GaSb resonant tunnelling structure (RTS). It is shown that coupling to the heavy hole states results in the additional peaks of the tunnelling probability and the magnitudes of these peaks for the processes with changing the Landau-level index can be of the order of those for the processes with conservation of the Landau-level index.