Title of article
A poly-Si thin film transistor fabricated by new excimer laser recrystallization employing floating active structure
Author/Authors
Song، نويسنده , , In-Hyuk and Kim، نويسنده , , Cheon-Hong and Nam، نويسنده , , Woo-Jin and Han، نويسنده , , Min-Koo، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2002
Pages
4
From page
225
To page
228
Abstract
We fabricated a high-performance polycrystalline silicon (poly-Si) thin film transistor (TFT) by new excimer laser annealing (ELA) method employing floating active structure. The new simple ELA method produces large lateral grains exceeding 4 μm. A novel poly-Si TFT that exhibits very high mobility (μFE=331 cm2/V s) and low leakage current has been successfully fabricated by single laser irradiation on selectively floating a-Si layer. Uniform lateral grains have been obtained with wide ELA process window.
Keywords
Poly-Si TFT , ELA (Excimer Laser Annealing) , Floating active structure , Air-gap
Journal title
Current Applied Physics
Serial Year
2002
Journal title
Current Applied Physics
Record number
1769056
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