Author/Authors :
Hong، نويسنده , , Sung-Jei and Lee، نويسنده , , Chan-Jae and Han، نويسنده , , Jeong-In and Kim، نويسنده , , Won-Keun and Moon، نويسنده , , Dae-Gyu and Kwak، نويسنده , , Min-Gi and Park، نويسنده , , Sungkyu and Kim، نويسنده , , Yong-Hoon، نويسنده ,
Abstract :
We developed new flexible metal–insulator–metal (MIM) devices subject to plastic film substrate. The structure of the MIM device is that a Ta2O5 insulator is covered with two flexible Al electrodes on both sides. The flexible structure of the MIM device was successfully fabricated applying our own etch-free process.
Keywords :
I–V characteristics , Symmetry , Etch-free process , MIM , Flexible electrode
