Title of article :
Photoluminescence detected enhancement of the electron–hole exchange interaction in a quantum well
Author/Authors :
Munteanu، نويسنده , , F.M. and Kim، نويسنده , , Y. and Perry، نويسنده , , C.H. and Rickel، نويسنده , , D.G. and Simmons، نويسنده , , J.A. and Reno، نويسنده , , J.L.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
6
From page :
63
To page :
68
Abstract :
We report the results of polarized magneto-photoluminescence (MPL) measurements on a high mobility modulation-doped GaAs/AlGaAs single quantum well. The magnetic field was varied between 0 and 60 T. The appearance of a doublet structure in the heavy-hole magneto-exciton in the high field regime was interpreted as an indication for enhanced electron–hole exchange interaction induced by the confinement. The effective g-factor of the electron determined from the Zeeman splitting was 3.7 times higher than the bulk value.
Keywords :
A. Quantum wells , A. Semiconductors
Journal title :
Solid State Communications
Serial Year :
2000
Journal title :
Solid State Communications
Record number :
1769136
Link To Document :
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