Title of article :
Identification of Raman-active phonon modes in oriented platelets of InN and polycrystalline InN
Author/Authors :
Dyck، نويسنده , , J.S. and Kim، نويسنده , , K. and Limpijumnong، نويسنده , , S. and Lambrecht، نويسنده , , W.R.L. and Kash، نويسنده , , K. and Angus، نويسنده , , J.C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
6
From page :
355
To page :
360
Abstract :
We report on micro-Raman studies on both randomly oriented polycrystals and groups of oriented, faceted platelets of indium nitride grown from the melt at subatmospheric pressures. Phonon modes were assigned as A1TO=445, E1TO=472, E2(2)=488, and A1LO=588 cm−1. The FWHM of the E2(2) peak of 2.5 cm−1 is the narrowest reported to date for InN. The measured TO phonon frequencies were compared to those calculated from first principles and excellent agreement was found. The results are discussed in the context of previously reported Raman experiments on heteroepitaxial, and hence strained, layers of InN.
Keywords :
A. Semiconductors , D. phonons , E. Inelastic light scattering
Journal title :
Solid State Communications
Serial Year :
2000
Journal title :
Solid State Communications
Record number :
1769267
Link To Document :
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