Title of article :
Energy resolved spin-polarised electron photoemission from strained GaAs/GaAsP heterostructure
Author/Authors :
Mamaev، نويسنده , , Yu.A. and Subashiev، نويسنده , , A.V. and Yashin، نويسنده , , Yu.P. and Drouhin، نويسنده , , H.-J. and Lampel، نويسنده , , G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
401
To page :
405
Abstract :
High resolution energy distribution curves (EDC) and a polarisation versus energy distribution curves (PEDC) of the electrons, photoemitted from strained GaAs/GaAsP layers are experimentally studied. The basic structures of the spectra are found to vary with temperature and illuminating wavelength. The ageing of the activation layer changes the EDC shape as well. Nevertheless, in the vicinity of the photoexcitation threshold the polarisation does not vary across the energy distribution both at room and 120 K temperatures of the cathode, which means that no depolarisation occurs during energy relaxation in the band bending region. The electron energy distribution is interpreted in terms of the electron energy relaxation in the band tail states of the quantum well formed by the band-bending region.
Keywords :
A. Semiconductors , D. Spin dynamics , D. Electronic states (localised) , E. Electron emission spectroscopies
Journal title :
Solid State Communications
Serial Year :
2000
Journal title :
Solid State Communications
Record number :
1769287
Link To Document :
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