Author/Authors :
Kim، نويسنده , , J.Y. and Park، نويسنده , , J.Y. and Seo، نويسنده , , J.H. and Whang، نويسنده , , C.N. and Kim، نويسنده , , S.S. and Choi، نويسنده , , D.S. and Kang، نويسنده , , H.J. and Chae، نويسنده , , K.H.، نويسنده ,
Abstract :
The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2×1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2×1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3.18±0.05 إ from the second layer of Si(0 0 1)(2×1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0.46±0.06 ML.
Keywords :
low energy ion scattering , surface structure , Silicon , cesium
