Author/Authors :
Kim، نويسنده , , Hyun Jin and Kwon، نويسنده , , Soon-Yong and Yim، نويسنده , , Sanggiun and Na، نويسنده , , Hyunseok and Kee، نويسنده , , Bong K. Yoon، نويسنده , , Euijoon and Kim، نويسنده , , Jaehoon and Park، نويسنده , , Si-Hyun and Jeon، نويسنده , , Heonsu and Kim، نويسنده , , Sunwoon and Seo، نويسنده , , Jun Ho and Park، نويسنده , , Keunseop and Seon، نويسنده , , Moon Suk and Sone، نويسنده , , Cheolsoo and Nam، نويسنده , , Ok ، نويسنده ,
Abstract :
GaN epitaxial layers were grown by metalorganic chemical vapor deposition with preheated ammonia as a group V source. The growth rates of GaN epilayers were little affected when ammonia preheater temperature was varied from room temperature to 1000 °C, however, their electrical properties as well as source materials utilization efficiency was significantly improved by using preheated ammonia. GaN epilayers grown with preheated ammonia showed excellent structural and optical properties.
Keywords :
MOCVD , Ammonia preheater , Nitride semiconductor , GaN , epitaxy
