Magneto-exciton in the thin AlAs/GaAs quantum well in an in-plane magnetic field

The magneto-optical properties of a thin AlAs/GaAs quantum well under an in-plane magnetic field have been studied theoretically. The theoretical model includes the excitonic effect and Γ–X valley mixing. We employ a delta-like interfacial potential introduced by Liu [Appl. Phys. Lett. 51 (1987) 1019] to describe the Γ–X mixing, which leads to a set of coupled differential equations in mixing type-I and type-II excitons. The numerical results including the exciton energy and the absorption spectra for various strengths of the in-plane magnetic field are obtained. It is found that an in-plane magnetic field induces Type-I to Type-II magneto-exciton transition at 72 T for the AlAs (25 Å)/GaAs (31 Å) quantum well.