Title of article :
Optical transitions of liquid phase epitaxy grown (Ga,Mn)As in magnetic fields
Author/Authors :
Kim، نويسنده , , Yongmin، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2004
Pages :
4
From page :
415
To page :
418
Abstract :
Low temperature (4.0 K) photoluminescence measurements of liquid phase epitaxy grown (Ga,Mn)As epilayers show distinctive donor–acceptor pair transitions. Below 0.3% Mn molar fractions, only one broad transition and its phonon echo were observed. However, exceeding 0.3%, three peaks at 1.409, 1.408 and 1.400 eV labeled as H, M and L, respectively, of acceptor related transitions were observed along with their phonon echoes. In the presence of magnetic field, the transitions are highly polarized to σ+ polarization and H peak shows free-carrier-like transition behavior whereas M and L peaks exhibit conventional donor–acceptor bound exciton transitions.
Keywords :
GaMnAs , Photoluminescence , Magnetic field , magnetic semiconductor
Journal title :
Current Applied Physics
Serial Year :
2004
Journal title :
Current Applied Physics
Record number :
1769531
Link To Document :
بازگشت