Title of article :
Molecular arrangement and electronic band structure of θ-(BEDT-TTF)2CsZn(SCN)4 controlled by uniaxial compression
Author/Authors :
Kondo، نويسنده , , R. and Higa، نويسنده , , M. and Kagoshima، نويسنده , , S. and Hoshino، نويسنده , , H. and Mori، نويسنده , , T. and Mori، نويسنده , , H.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2004
Pages :
4
From page :
484
To page :
487
Abstract :
Using the uniaxial strain method, the lattice parameters and the atomic positions of the quasi-two-dimensional organic conductor θ-(BEDT-TTF)2CsZn(SCN)4 were measured at room temperature with piston pressures up to 10 kbar applied parallel to the c-axis in the conducting plane. The lattice parameter c was predominantly reduced with increasing the piston pressure although a small Poissonʹs effect occurred in the parameter a. Band calculation showed that the transfer integrals under the uniaxial compression by the piston pressure of 10 kbar became similar to those of θ-(BEDT-TTF)2 RbZn(SCN)4. This result is consistent with that of transport measurements reported already and suggests that a charge disproportionation, which has been observed in the RbZn-compound, occurs also in the present compound under the uniaxial compressive strain.
Keywords :
Uniaxial strain , Electronic structure , crystal structure , Uniaxial compression , Organic conductor , Transport properties
Journal title :
Current Applied Physics
Serial Year :
2004
Journal title :
Current Applied Physics
Record number :
1769553
Link To Document :
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