Electrical properties of nanointerface at poly(3-hexylthiophehe) and metal junctions probed directly with potential tip

Electrical properties at the nanointerfaces of head-to-tail coupled poly(3-hexylthiophene), PHT and metals (Au, Al) in sandwich type Al/PHT/Au diodes have been investigated using a nanomanipulator with the potential probing tip. It has been directly found that the highly insulating layer and the appreciable contact resistance are formed at Al/PHT with the thickness of several tens nanometer and PAT/Au, respectively. The bias dependence of the interface resistances at Al/PHT shows the origin of rectification. It has also been found that the interface resistance at PAT/Au is unexpectedly large, though the current–voltage behavior is ohmic. The results indicate the contact resistances between PHT and metals at the nanometric region are important factors to determine the diode performance.