Title of article
Selective growth of individual multiwalled carbon nanotubes
Author/Authors
Morjan، نويسنده , , R.E. and Kabir، نويسنده , , M.S. and Lee، نويسنده , , S.W. and Nerushev، نويسنده , , O.A. and Lundgren، نويسنده , , P. and Bengtsson، نويسنده , , S. and Park، نويسنده , , Y.W. and Campbell، نويسنده , , E.E.B.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
4
From page
591
To page
594
Abstract
Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.
Keywords
PECVD , Controlled individual growth , Multiwalled carbon nanotubes , Plasma-enhanced chemical vapour deposition
Journal title
Current Applied Physics
Serial Year
2004
Journal title
Current Applied Physics
Record number
1769613
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