Author/Authors :
Morjan، نويسنده , , R.E. and Kabir، نويسنده , , M.S. and Lee، نويسنده , , S.W. and Nerushev، نويسنده , , O.A. and Lundgren، نويسنده , , P. and Bengtsson، نويسنده , , S. and Park، نويسنده , , Y.W. and Campbell، نويسنده , , E.E.B.، نويسنده ,
Abstract :
Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.
Keywords :
PECVD , Controlled individual growth , Multiwalled carbon nanotubes , Plasma-enhanced chemical vapour deposition
