Author/Authors :
Kim، نويسنده , , J.J. and Makino، نويسنده , , H. and Yamazaki، نويسنده , , K. and Ino، نويسنده , , A. and Namatame، نويسنده , , H. and Taniguchi، نويسنده , , M. and Hanada، نويسنده , , T. F. Cho ، نويسنده , , M.W. and Yao، نويسنده , , T.، نويسنده ,
Abstract :
We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.
