Title of article
Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy
Author/Authors
Lee، نويسنده , , Jing-Jy and Chang، نويسنده , , J.H. and Yang، نويسنده , , M. and Ahn، نويسنده , , H.S. and Yi، نويسنده , , S.N. and Goto، نويسنده , , K. and Godo، نويسنده , , K. and Makino، نويسنده , , H. and Cho، نويسنده , , M.W. and Yao، نويسنده , , T. and Song، نويسنده , , J.S.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
4
From page
611
To page
614
Abstract
Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly efficient luminescence, various optical spectroscopic methods such as, photoluminescence (PL), temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found that structural inhomogeneities affect dominant influence on the line width and line shape of luminescence. The luminescence intensity greatly enhanced by the localization of exciton at the disorder induced localized states.
Keywords
II–VI compounds , Exciton localization
Journal title
Current Applied Physics
Serial Year
2004
Journal title
Current Applied Physics
Record number
1769624
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