• Title of article

    Optical band gap and optical constants in a-Se80Te20−xPbx thin films

  • Author/Authors

    Khan، نويسنده , , Shamshad A. and Zulfequar، نويسنده , , M. and Husain، نويسنده , , M.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2005
  • Pages
    5
  • From page
    583
  • To page
    587
  • Abstract
    The optical constants (absorption coefficient, refractive index, extention coefficient, real and imaginary part of dielectric constant) have been studied for a-Se80Te20−xPbx (where x = 0, 2, 6, 10) thin films as a function of photon energy in the wave length range (500–1000 nm). It has been found that the optical band gap increases while the refractive index and the extinction coefficient (k) decreases on incorporation of lead in Se–Te system. The value of absorption coefficient (α) and the extinction coefficient (k) increases, while the value of refractive index (n) decreases with incident photon energy. The results are interpreted in terms of the change in concentration of localized states due to the shift in fermi level.
  • Keywords
    chalcogenides , Amorphous semiconductor , Optical band gap , Thin films , Optical constants
  • Journal title
    Current Applied Physics
  • Serial Year
    2005
  • Journal title
    Current Applied Physics
  • Record number

    1769978