Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film

N,N′-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (≈2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 × 10−4 cm2/V s and 1.1 × 10−4 cm2/V s under the electric field of 500 (V/cm)1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction.