Author/Authors :
Sz?ll?si، نويسنده , , P. and Basa، نويسنده , , P. and Dücs?، نويسنده , , Cs. and M?té، نويسنده , , B. and Adam، نويسنده , , M. and Lohner، نويسنده , , T. and Petrik، نويسنده , , P. and Pécz، نويسنده , , B. and T?th، نويسنده , , L. and Dobos، نويسنده , , L. and D?zsa، نويسنده , , L. and Horv?th، نويسنده , , Zs.J.، نويسنده ,
Abstract :
In this study an investigation is presented on LPCVD deposited and annealed Si-rich SiNx layers on Si substrates. The samples prepared by this way were characterized by capacitance–voltage, current–voltage, and memory hysteresis measurements. The electrical properties were studied as a function of annealing temperature. Systematic dependence of the flat-band voltage and the current have been obtained on the annealing conditions.
Keywords :
nanocrystals , Silicon nitride , Annealing , Memory , SiNx
