Author/Authors :
Pang، نويسنده , , G.K.H. and Tai، نويسنده , , C.W. and Wang، نويسنده , , Y. and Liu، نويسنده , , W.L. and Song، نويسنده , , Z.T. and Feng، نويسنده , , S.L. and Chan، نويسنده , , H.L.W. and Choy، نويسنده , , C.L.، نويسنده ,
Abstract :
In this study, the structural properties of single-crystal SrTiO3 implanted with H+ have been investigated by transmission electron microcopy (TEM). The investigation was carried out on an as-implanted sample and samples after annealing at 500 °C and 700 °C for 2 h. It shows that the basic process of layer splitting involves the formation of microcracks and microcavities in the depth determined from the implanted energy similar to the process in the case of silicon. The as-implanted sample shows large out-of-plane strain also similar to the report in silicon. The microcavities are filled with amorphous material as the result of complicated interaction of the defects during the annealing.
