• Title of article

    A relationship between a metal work function and a diffusion potential at Schottky barriers in photovoltaic cells based on a molecular semiconductor

  • Author/Authors

    Harima، نويسنده , , Yutaka and Kodaka، نويسنده , , Takuji and Okazaki، نويسنده , , Hiroshi and Kunugi، نويسنده , , Yoshito and Yamashita، نويسنده , , Kazuo and Ishii، نويسنده , , Hisao and Seki، نويسنده , , Kazuhiko، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1995
  • Pages
    6
  • From page
    345
  • To page
    350
  • Abstract
    A Schottky-Mott rule is examined for the molecular solids of zinc(II) tetraphenylporphyrin (ZnTPP) contacting various metals in order to clarify an influence of surface states on formation of the Schottky barriers. For the same purpose, photocurrents due to the ZnTPP/metal contacts are compared with those observed for the Al/ZnTPP/Au cell biased at different voltages. As a result, the Schottky barrier formation at the contacts is found to be hardly influenced by the surface states, if any, attributable to the ZnTPP solids. It is also found that the Fermi level of the ZnTPP solid lies 4.9 eV below the vacuum level.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    1995
  • Journal title
    Chemical Physics Letters
  • Record number

    1770936