Title of article
A relationship between a metal work function and a diffusion potential at Schottky barriers in photovoltaic cells based on a molecular semiconductor
Author/Authors
Harima، نويسنده , , Yutaka and Kodaka، نويسنده , , Takuji and Okazaki، نويسنده , , Hiroshi and Kunugi، نويسنده , , Yoshito and Yamashita، نويسنده , , Kazuo and Ishii، نويسنده , , Hisao and Seki، نويسنده , , Kazuhiko، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
6
From page
345
To page
350
Abstract
A Schottky-Mott rule is examined for the molecular solids of zinc(II) tetraphenylporphyrin (ZnTPP) contacting various metals in order to clarify an influence of surface states on formation of the Schottky barriers. For the same purpose, photocurrents due to the ZnTPP/metal contacts are compared with those observed for the Al/ZnTPP/Au cell biased at different voltages. As a result, the Schottky barrier formation at the contacts is found to be hardly influenced by the surface states, if any, attributable to the ZnTPP solids. It is also found that the Fermi level of the ZnTPP solid lies 4.9 eV below the vacuum level.
Journal title
Chemical Physics Letters
Serial Year
1995
Journal title
Chemical Physics Letters
Record number
1770936
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