Author/Authors :
Zhu، نويسنده , , Yan Qiu and Hsu، نويسنده , , Wen Kuang and Grobert، نويسنده , , Nicole and Terrones، نويسنده , , Mauricio and Terrones، نويسنده , , Humberto and Kroto، نويسنده , , Harold W and Walton، نويسنده , , David R.M and Wei، نويسنده , , Bing Qing، نويسنده ,
Abstract :
Flower-like Si nanostructures are formed in high yield, by heating an SiO2 plate at ca. 1600 °C (Ta heater) under Ar (100 Torr). The product consists of metal-free cubic phase Si nanowires surmounted by bulbous Si tips. HRTEM observations show that the nanowires contain kink and twinning defects, whereas the tips are generally well-crystallized and covered with a thin layer of amorphous SiOx (x = 1–2). A growth model is proposed to account for these observations.
