Synthesis of long carbon nanotubes filled with Se, S, Sb and Ge by the arc method

The possibility of forming ‘nanowires’ in carbon nanotubes by the arc-discharge method was investigated for the elements of group B which are of interest in the semiconductor field. Fourteen elements were studied: Zn, Cd (IIB); B, Al, In (IIIB); Si, Ge, Sn, Pb (IVB); Sb, Bi (VB); S, Se, Te (VIB). It was found that long continuous nanowires in carbon nanotubes are produced in large quantities for four elements: Se, S, Sb and Ge.