Hyperthermal particle enhanced silicon epitaxy

A semiquantitative subplantation (SQSP) model for hyperthermal particle enhancement of epitaxy is described. The mechanism proposes that storage of a portion of the kinetic energy of hyperthermal particles as interstitial atoms and subsequent release of this energy is a general phenomenon that is responsible for ion beam enhanced epitaxy and growth of metastable materials. A generalized epitaxial phase diagram in energy–temperature space is constructed which provides an understanding of the limited and unlimited silicon homoepitaxial growth from thermal (MBE) and hyperthermal Si atoms, respectively.