Title of article
Electronic states of Ga3P and GaP3 clusters
Author/Authors
Feng، نويسنده , , Ping Yi and Balasubramanian، نويسنده , , K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
6
From page
1
To page
6
Abstract
Complete active space multi-configuration self-consistent field (CASSCF) followed by multi-reference singles+doubles configuration interaction (MRSDCI) computations are carried out on the low-lying electronic states of Ga3P and GaP3. The ground states of Ga3P and GaP3 are found to be 1A1 and 3A2, respectively, with trigonal pyramid geometries (C3v). Other low-lying excited electronic states of Ga3P and GaP3 are computed. Dipole-allowed transitions in the 2.56 and 1.07 eV regions are predicted for Ga3P and GaP3, respectively. The relative stability of small clusters GaxPy (x+y=3–5) is discussed.
Journal title
Chemical Physics Letters
Serial Year
1998
Journal title
Chemical Physics Letters
Record number
1773316
Link To Document