• Title of article

    Electronic states of Ga3P and GaP3 clusters

  • Author/Authors

    Feng، نويسنده , , Ping Yi and Balasubramanian، نويسنده , , K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    6
  • From page
    1
  • To page
    6
  • Abstract
    Complete active space multi-configuration self-consistent field (CASSCF) followed by multi-reference singles+doubles configuration interaction (MRSDCI) computations are carried out on the low-lying electronic states of Ga3P and GaP3. The ground states of Ga3P and GaP3 are found to be 1A1 and 3A2, respectively, with trigonal pyramid geometries (C3v). Other low-lying excited electronic states of Ga3P and GaP3 are computed. Dipole-allowed transitions in the 2.56 and 1.07 eV regions are predicted for Ga3P and GaP3, respectively. The relative stability of small clusters GaxPy (x+y=3–5) is discussed.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    1998
  • Journal title
    Chemical Physics Letters
  • Record number

    1773316