Title of article
Electronic states of the Ga3As2 and Ga2As3 clusters
Author/Authors
Liao، نويسنده , , M.Z. and Dai، نويسنده , , Dingguo and Balasubramanian، نويسنده , , K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
7
From page
124
To page
130
Abstract
We computed the optimized geometries and energy separations of several electronic states of Ga3As2 and Ga2As3 clusters using the complete active space multiconfiguration self-consistent-field (CASSCF) followed by multireference singles + doubles configuration interaction (MRSDCI) computations which included up to 1.9 million configurations. The properties of the electronic states in distorted and undistorted trigonal bipyramid, and edge-capped tetrahedron structures of Ga3As2 are computed. Two nearly degenerate structures and several excited states were found for Ga3As2 while the Ga2As3 cluster exhibits undistorted trigonal bipyramidal states.
Journal title
Chemical Physics Letters
Serial Year
1995
Journal title
Chemical Physics Letters
Record number
1773918
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