• Title of article

    Electronic states of the Ga3As2 and Ga2As3 clusters

  • Author/Authors

    Liao، نويسنده , , M.Z. and Dai، نويسنده , , Dingguo and Balasubramanian، نويسنده , , K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1995
  • Pages
    7
  • From page
    124
  • To page
    130
  • Abstract
    We computed the optimized geometries and energy separations of several electronic states of Ga3As2 and Ga2As3 clusters using the complete active space multiconfiguration self-consistent-field (CASSCF) followed by multireference singles + doubles configuration interaction (MRSDCI) computations which included up to 1.9 million configurations. The properties of the electronic states in distorted and undistorted trigonal bipyramid, and edge-capped tetrahedron structures of Ga3As2 are computed. Two nearly degenerate structures and several excited states were found for Ga3As2 while the Ga2As3 cluster exhibits undistorted trigonal bipyramidal states.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    1995
  • Journal title
    Chemical Physics Letters
  • Record number

    1773918